Identifying Contact Effects in Electronic Conduction throughC60on Silicon

Conduction mechanism in a molecular hydrogen contact.

We present first principles calculations for the conductance of a hydrogen molecule bridging a pair of Pt electrodes. The transmission function has a wide plateau with T approximately 1 which extends across the Fermi level and indicates the existence of a single, robust conductance channel with nearly perfect transmission. Through a detailed Wannier function analysis we show that the H(2) bondi...

Phonon Conduction in Periodically Porous Silicon Nanobridges

Silicon Nanowire for Thermoelectric Applications: Effects of Contact Resistance

Silicon nanowire (SiNW) based thermoelectric device (TED) has potential applications in areas such as chip level cooling/ energy harvesting. It is a great challenge however, to assemble an efficient device with these SiNW. The presence of parasitic in the form of interfacial electrical resistance will have a significant impact on the performance of the TED. In this work, we explore the effect o...

Probing electronic excitations in molecular conduction

We identify experimental signatures in the current-voltage I-V characteristics of weakly contacted molecules directly arising from excitations in their many electron spectrum. The current is calculated using a multielectron master equation in the Fock space of an exact diagonalized model many-body Hamiltonian for a prototypical molecule. Using this approach, we explain several nontrivial featur...

Non-Ohmic effects in hopping conduction in doped silicon and germanium between 0.05 and 1 K

We have studied non-Ohmic effects in hopping conduction in moderately compensated ion-implanted Si:P, B both nand p-type and neutron-transmutation-doped Ge:Ga,As over the temperature range 0.05–0.8 K and up to moderately strong electric fields. In the limit of small fields, where the current is proportional to applied voltage, the resistivities of these materials are approximated over a wide te...